Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications
Seungjun Moon, Jaemin Shin, Changhwan Shinసంవత్సరం:
2020
ప్రచురణకర్త:
MDPI
భాష:
english
పేజీల సంఖ్య:
9
ఫైల్:
PDF, 2.05 MB
IPFS:
,
english, 2020